Effects of Thermal Treatment and Cu Join on Mixing Degree of SiC-C Coatings and Substrates
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摘要: 在不锈钢基体上用离子束混合技术沉积SiC-C涂层，为有效提高SiC-C涂层与不锈钢基体元素的混合效应，采用涂覆后对样品进行加热处理以及在不锈钢基体上预沉积Cu薄膜的方法，试图改善SiC-C涂层与基体的混合效果。通过二次离子质谱（SIMS）测试分析涂层与基体的界面组份分布。结果表明，加热处理可以提高SiC-C涂层组元向基体的内扩散，但效果不甚显著。添加Cu层以及随后的加热处理可极大提高与不锈钢基体的混合程度。Abstract: SiC-C coatings were deposited on stainless steel substrates using ion beam mixing. In order to improve the element intermixing effect on the coatings and the substrates, thermal treatment and the addition of Cu were used. Secondary ion mass spectroscopy analysis was used to characterize the element distributions for the transition layer between SiC-C coatings and substrates. The diffusion of elements from the coating into substrate happened due to thermal treatment, but its effect on widening the transition layer between C-SiC coating and Fe substrate for the samples of the C-SiC coating on stainless steel substrate is not significant. But, Cu addition and the following thermal treatment can effectively enhance element mixing between the coatings and the substrates.
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Keywords:
- SiC-C coatings ,
- Cu film ,
- thermal treatment ,
- degree of the mixing
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[1] 任丁，张瑞谦，黄宁康. 加热去氩处理工艺对离子束混合沉积的C-SiC涂层阻氢性能的影响[J]. 原子能科学技术，2007，41(5): 586-590.
REN Ding, ZHANG Ruiqian, HUANG Ningkang. Effect of eliminating argon by heat-treatment on hydrogen resistance of C-SiC films deposited by ion beam mixing[J]. At Energy Sci Technol, 2007, 41(5): 586-590(in Chinese).[2] CAUSEY R A, WAMPLER W R, RETTELLE J R, et al. Tritium migration in vapour-deposited β-silicon carbide[J]. J Nucl Mater, 1993, 203(1): 196-205. [3] ULRICKSON M. Material selection for TFTR limiters[J]. J Vac Sci Technol, 1981, 18: 1 037-1 945. [4] HUANG N K, WANG D Z, XIONG Q, et al. XPS study of hydrogen permeation effect on SiC-C films[J]. Nucl Instrum Methods Phys Res, 2003, B207(4): 395-401. [5] PERUJO A, FORCEY K S. Tritium permeation barriers for fusion technology[J]. Fusion Eng Des, 1995, 28(2): 252. [6] 王佩璇，王宇，史宝贵. 不锈钢表面沉积SiC作为氢渗透阻挡层的研究[J]. 金属学报，1999, 35(6): 654-658.
WANG Peixuan, WANG Yu, SHI Baogui. A study of SiC films deposited onto stainless steel as hydrogen permeation barrier[J]. Acta Metal Sin, 1999, 35(6): 654-658(in Chinese).[7] HUANG N K, YANG B, XIONG Q. Behaviors of hydrogen in C-SiC films with IR and SIMS analyses[J]. Nucl Instrum Methods Phys Res, 2002, B195(3-4): 344-349. [8] 黄宁康，王明华，申勇, 等. 离子束电子束多功能材料表面处理设备[J]. 核技术, 1988（8）: 30-37.
HUANG Ningkang, WANG Minghua, SHEN Yong, et al. An ion and electron beamsmultifunction equipment for materials surface treating[J]. Nucl Tech, 1988（8）: 30-37(in Chinese).[9] 刘金声. 离子束沉积薄膜技术及应用[M]. 北京：国防工业出版社，2003：65-89.
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