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氨处理抑制SiO2/ZrO2薄膜膜间渗透

Infiltrating Control of SiO2/ZrO2 Sol-Gel Films by Ammonia Treatment

    摘要
  • 摘要: 以正硅酸乙酯和丙醇锆为原料，用溶胶-凝胶法在K9基片上提拉镀制SiO2/ZrO2双层膜，样品1镀完SiO2后直接镀ZrO2，样品2镀完SiO2经氨处理后再镀ZrO2。研究表明，ψ和Δ两个椭偏参数的模拟值曲线与椭偏仪的测量值曲线十分吻合，进而发现氨处理可有效抑制SiO2/ZrO2双层膜之间的渗透，氨处理后渗透层减少近45 nm。利用激光束对两种样品进行了损伤阈值的测试，用光学显微镜观察损伤形貌，结果发现两者损伤阈值分别为14.8和15.03 J/cm2，损伤形貌均为熔融型。

     

    Abstract: The twolayer SiO2/ZrO2 thin films were deposited on K9 glass by solgel dipcoating method. The colloidal suspensions of ZrO2 and SiO2 were prepared using Zr(OPr)4 and TEOS as materials, respectively. For sample 1, the ZrO2 film was directly deposited on the predeposited SiO2 film. For sample 2, the ZrO2 film was deposited on the predeposited and ammoniatreated SiO2 film. Analysis results indicate that the simulated ψλ and Δλ curves are perfectly consistent with the experimental curves. The results show that the thickness of infiltrated layer of sample 2 is reduced by 45 nm by ammonia treatment compared with smaple 1. The laserinduced damage threshold (LIDT) of the two kinds of films were measured. The LIDT of samples 1 and 2 are 14.8 and 15.03 J/cm2, respectively. The damage morphologies are mainly ablation according to optical microscopy.

     

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