Processing math: 100%

反熔丝型现场可编程门阵列单粒子锁定实验研究

田 恺, 曹 洲, 薛玉雄, 杨世宇, 周新发, 刘 群, 彭 飞

田 恺, 曹 洲, 薛玉雄, 杨世宇, 周新发, 刘 群, 彭 飞. 反熔丝型现场可编程门阵列单粒子锁定实验研究[J]. 原子能科学技术, 2009, 43(9): 1-938. DOI: 10.7538/yzk.2009.43.09.0855
引用本文: 田 恺, 曹 洲, 薛玉雄, 杨世宇, 周新发, 刘 群, 彭 飞. 反熔丝型现场可编程门阵列单粒子锁定实验研究[J]. 原子能科学技术, 2009, 43(9): 1-938. DOI: 10.7538/yzk.2009.43.09.0855
TIAN Kai, CAO Zhou, XUE Yu-xiong, YANG Shi-yu, ZHOU Xin-fa, LIU Qun, PENG Fei. Experimental Study on Single Event Latchup of Antifuse Field Programmable Gate Array[J]. Atomic Energy Science and Technology, 2009, 43(9): 1-938. DOI: 10.7538/yzk.2009.43.09.0855
Citation: TIAN Kai, CAO Zhou, XUE Yu-xiong, YANG Shi-yu, ZHOU Xin-fa, LIU Qun, PENG Fei. Experimental Study on Single Event Latchup of Antifuse Field Programmable Gate Array[J]. Atomic Energy Science and Technology, 2009, 43(9): 1-938. DOI: 10.7538/yzk.2009.43.09.0855

反熔丝型现场可编程门阵列单粒子锁定实验研究

Experimental Study on Single Event Latchup of Antifuse Field Programmable Gate Array

  • 摘要: 利用单粒子效应脉冲激光和锎源模拟试验系统,对反熔丝型A42MX36现场可编程门阵列进行了单粒子锁定敏感性评估试验。脉冲激光试验确定了单粒子锁定脉冲激光阈值能量及其等效重离子LET、锁定电流等敏感参数;锎源模拟试验确定了单粒子锁定截面。对试验中出现的由单粒子绝缘击穿和单粒子伪锁定引起的电流跃变现象进行了讨论和分析。

     

    Abstract: Single event latchup sensitivity evaluation tests of antifuse A42MX36 field programmable gate array were performed using pulsed laser and 252Cf source single event effect simulation system. The sensitivity parameters such as pulsed laser threshold energy as well as its equivalent heavyion LET and latchup current of device were determined in pulsed laser test. The latchup crosssection was obtained in 252Cf source test. The currentjump phenomena induced by single event dielectric rupture (SEDR) and pseudo single event latchup (pSEL) in test was also discussed and analyzed.

     

  • [1] 1] BRUGUIER G, PALAU J M. Single particle induced latchup[J]. IEEE Trans Nucl Sci, 1996, 43(2): 522532.
    [2] HAMDY E, MCCOLLUM J, CHEN S, et al. Dielectric based antifused for logic and memory ICs[C] ∥IEDM Tech Digest. S.l. : IEEE, 1988: 786789.
    [3] WILEY P D. Fault tolerant design verification through the use of laser fault injection[D]. Florida, US: University of South Florida, 2004.
    [4] SHINDOU H, KUBOYAMA S, HIRAO T, et al. Local and pseudo SELs observed in digital LSIs and their implication to SEL test method[J]. IEEE Trans Nucl Sci, 2005, 52(6): 2 6382 641.
    [5] MELINGER J S, BUCHNER S, MCMORROW D, et al. Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies[J]. IEEE Trans Nucl Sci, 1994, 41(6): 2 5742 584.
    [6] BUCHNER S, KNUDSON A, KANG K, et al. Charge collection from focused picosecond laser pulses[J]. IEEE Trans Nucl Sci, 1988, 35(6): 1 5171 522.
计量
  • 文章访问数:  1064
  • HTML全文浏览量:  0
  • PDF下载量:  664
  • 被引次数: 0
出版历程
  • 收稿日期:  1899-12-31
  • 修回日期:  1899-12-31
  • 刊出日期:  2009-09-19

目录

    /

    返回文章
    返回