64K CMOS随机存储器瞬时辐射损伤模式分析
Damage Pattern of Transient γ-Radiation in 64K CMOS SRAM
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摘要: 对64K CMOS随机存储器6264进行了“强光一号”长脉冲辐射状态和短脉冲辐射状态下的辐照实验，测量了存储器翻转效应，分析了不同脉冲宽度下效应的差异，绘制了存储单元的翻转位图，研究了6264的辐射损伤模式。对于6264，其存储单元的翻转主要由内部路轨塌陷引起。Abstract: Transient irradiation tests on a 64K CMOS SRAM 6264 were performed with different width γ-pulses. The numbers of upset were measured at different dose rates. Damage pattern in SRAM under transient γ-radiation was presented. The results indicate that the transient upset in 6264 is induced from rail span collapse.
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