Abstract: The chargecoupled devices (CCDs) TCD1209D that manufactured by Toshiba were irradiated under ⁶⁰Co γ rays and 1 MeV electron beam (E-beam). The relationship between accumulated dose and the output singnal waveform, intensity of the light and supply current of CCDs was obtained. Meanwhile, the radiation damage induced by γ rays was compared with that induced by E-beam. It has shown by the results that radiation damage induced by γ rays and E-beam is different not only in the damage degree, but also in the forms of damage. Finally, the impacts of ionization damage and displacement damage on different components in CCDs were compared and it has shown that the differences mentioned above are mainly caused by the displacement damage induced by E-beam irradiation.