中子辐照诱导Si PIN光电二极管暗电流增大的数值模拟

Simulation of Dark Current Increase in Si PIN Photodiode Induced by Neutron Irradiation

摘要: 分析了中子辐照诱导Si PIN光电二极管暗电流增大现象的机理，建立了Si PIN光电二极管的器件物理模型和中子辐照效应模型。运用MEDICI软件进行数值模拟计算，得出了1 MeV中子在辐照注量为10¹⁰～10¹⁴cm^-2时，Si PIN光电二极管暗电流变化的初步规律。数值模拟结果与相关文献给出的实验结果吻合较好。

Abstract: The mechanism of dark current increase in Si PIN photodiode induced by neutron irradiation was analyzed. The device physics and neutron irradiation models were presented to simulate dark current in Si PIN photodiode by MEDICI software. The primary regularity of dark current increase in Si PIN photodiode was concluded by neutron irradiation with the energy of 1 MeV and at the fluence of 10¹⁰-10¹⁴ cm^-2. The simulation results are in agreement with the experimental results from relevant literature.