SRAM单元中子单粒子翻转效应的Geant4模拟

Simulations of Single-Event Upset in SRAMs Induced by Neutrons With Geant4

摘要: 应用Geant4工具，构造了不同特征尺寸的SRAM单元几何模型及单粒子翻转截面计算模型，分析了敏感体积和临界电荷对低能中子单粒子翻转效应的影响趋势，计算了反应堆裂变中子谱辐射环境下，不同特征尺寸SRAM的中子单粒子翻转截面，认为小尺寸SRAM器件的低能中子单粒子翻转效应更为严重。

Abstract: The sensitivity of SRAMs to single-event upsets induced by neutrons with decreasing feature sizes was investigated using the Monte-Carlo code Geant4. Their device architecture and single-event upset cross section computation approach were presented. The single-event upset cross sections were analyzed for mono-energetic neutron and neutrons of fission spectrum of a reactor and discussed on the basis of different parameters such as the sensitive volume, the critical charge and the incident neutron energy. Small-size SRAM devices are more sensitive than large-size devices on single-event upset effect induced by low-energy neutron.