Abstract: Based on the analysis of the interaction between heavy ion as well as pulsed laser and silicon materials, a criterion for a pulsed laser energy equivalent linear energy transfer (LET) was presented. The criterion assumes that if each absorbed photon can generate a carrier in semiconductor materials, the energy to generate a carrier induced by pulsed laser and heavy ion is equivalent. Using this criterion and Beer’s law, an equivalent conversion formula between pulsed laser energy and heavy-ion LET under linear absorption was deduced. The calculation results of pulsed laser equivalent LET in this study are consistent with those in foreign documents.