电荷耦合器件的<sup>60</sup>Co <EM>γ</EM>射线辐照损伤退火效应

电荷耦合器件的⁶⁰Co γ射线辐照损伤退火效应

摘要: 基于⁶⁰Co γ射线辐照后的商用电荷耦合器件（CCD），对室温退火和100 ℃高温退火实验进行研究。考察了CCD的功耗电流、输出信号电压波形及光响应灵敏度等参数的变化。结果表明，CCD辐照过程中产生的氧化物电荷和界面态导致了CCD参数在室温和高温退火中的不同表现。

Abstract: Annealing experiment of commercial charge coupled devices (CCD) irradiated by gamma rays was carried out at room temperature and 100 ℃. Power currents, output signal voltage and optical response sensitivity of CCD were investigated during experiment. The result shows that oxide charges and interface traps result in different behaviors of CCD’s parameter during room temperature and 100 ℃ annealing.