不同偏置条件的10位CMOS模数转换器的辐射效应

Radiation Effects of 10-bit CMOS Analog to Digital Converters Under Different Bias Conditions

摘要: 对10位CMOS ADC7910在不同偏置条件下的电离辐射效应及退火特性进行了研究。结果表明：模数混合电路在不同偏置条件下的电离辐照响应有很大的差异。与加电偏置相比，零偏下0.25 Gy/s (Si)剂量率辐照时的辐射损伤更严重。并对其损伤机理进行了初步探讨。

Abstract: Radiation effects and room-temperature annealing behavior of CMOS analog to digital converters (ADC) irradiated by ⁶⁰Co γ-rays at various biased conditions were investigated. The results show that the response of the ADC is very different at different bias conditions. The worst irradiation bias condition is zero bias at 0.25 Gy/s(Si) irradiation. Based on the analysis of the mechanism of CMOS ionizing radiation damage, possible sensitive parameters and mechanism for this response werediscussed.