国产工艺的部分耗尽SOI MOSFET 总剂量辐照效应及可靠性

Total Dose Irradiation Effect and Reliability of Domestic Partially Depleted SOI MOSFET

摘要: 对国产工艺的部分耗尽SOI MOSFET ⁶⁰Co γ射线的总剂量辐照效应及其可靠性进行了研究。结果表明：辐照引入的氧化物陷阱电荷是阈值电压漂移的主要因素；背栅对总剂量辐照更为敏感，但在背栅特性漂移未超出一定范围的情况下，依然是正栅氧化层质量决定了器件的抗辐照性能；界面态陷阱电荷的散射作用降低了器件的源漏饱和电流；总剂量辐照后器件的常规可靠性可能会降低。

Abstract: Total dose irradiation effect and reliability of domestic partially-depleted SOI MOSFET were studied. It is found that the oxide-trapped charge mainly causes the threshold voltage shift. The back gate is more sensitive to the total dose irradiation than the top gate, while it is still the top gate that determines the radiation performance of the device as the back gate shifts within a certain scope. The descendent of the saturated current results from the action of the interface-trap charge. It is also believed that the total dose irradiation will lower the device reliability.