质子核反应二次粒子引起的静态存储器单粒子翻转截面计算

王园明, 陈伟, 郭红霞, 何宝平, 罗尹虹, 姚志斌, 张凤祁, 张科营, 赵雯

王园明, 陈伟, 郭红霞, 何宝平, 罗尹虹, 姚志斌, 张凤祁, 张科营, 赵雯. 质子核反应二次粒子引起的静态存储器单粒子翻转截面计算[J]. 原子能科学技术, 2010, 44(12): 1505-1508. DOI: 10.7538/yzk.2010.44.12.1505
引用本文: 王园明, 陈伟, 郭红霞, 何宝平, 罗尹虹, 姚志斌, 张凤祁, 张科营, 赵雯. 质子核反应二次粒子引起的静态存储器单粒子翻转截面计算[J]. 原子能科学技术, 2010, 44(12): 1505-1508. DOI: 10.7538/yzk.2010.44.12.1505
WANG Yuan-ming, CHEN Wei, GUO Hong-xia, HE Bao-ping, LUO Yin-hong, YAO Zhi-bin, ZHANG Feng-qi, ZHANG Ke-ying, ZHAO Wen. Single Event Upset Cross Section Calculation for Secondary Particles Induced by Proton Using Geant4[J]. Atomic Energy Science and Technology, 2010, 44(12): 1505-1508. DOI: 10.7538/yzk.2010.44.12.1505
Citation: WANG Yuan-ming, CHEN Wei, GUO Hong-xia, HE Bao-ping, LUO Yin-hong, YAO Zhi-bin, ZHANG Feng-qi, ZHANG Ke-ying, ZHAO Wen. Single Event Upset Cross Section Calculation for Secondary Particles Induced by Proton Using Geant4[J]. Atomic Energy Science and Technology, 2010, 44(12): 1505-1508. DOI: 10.7538/yzk.2010.44.12.1505

质子核反应二次粒子引起的静态存储器单粒子翻转截面计算

Single Event Upset Cross Section Calculation for Secondary Particles Induced by Proton Using Geant4

  • 摘要: 研究建立了质子单粒子翻转截面计算方法。基于蒙特卡罗软件Geant4,计算分析了不同能量质子核反应产生二次粒子对有效体积带来的影响,确定了有效体积大小。计算了静态随机存取存储器的质子单粒子翻转截面和多位翻转截面。计算结果在趋势上与双参数公式所预言的相符合,并可得到很高能量质子引起的极限截面;在较低能段的数据与文献的理论和实验值相符。

     

    Abstract: Based on Monte-Carlo software Geant4, a model for calculating the proton single event upset (SEU) cross section of SRAM cell was presented. The secondary particles induced by protons were considered and effective sensitive regions were determined according to the range of the secondary particles. The single event upset and multiple bits upset (MBU) cross sections for protons with different energy were calculated. The results are in agreementwith the theoretical and experimental data.

     

  • [1] 王同权,戴宏毅,沈永平,等.宇宙高能质子致单粒子翻转率计算[J]. 国防科技大学学报,2002, 24(2):11-13.
    WANG Tongquan, DAI Hongyi, SHEN Yongping, et al. Calculation of cosmic high energy proton induced single event upset rate[J]. Journal of National University of Defense Technology, 2002, 24(2):11-13(in Chinese).
    [2] 贺朝会,陈晓华,李国政.空间质子单粒子翻转效应的模拟计算[J]. 计算物理,2002,19 (4):367-371.
    HE Chaohui, CHEN Xiaohua, LI Guozheng. Simulation calculation of single event upset effects for high energy protons[J]. Chinese Journal of Computation Physics, 2002, 19(4): 367-371(in Chinese).
    [3] 杨海亮,李国政,姜景和,等.质子和中子的单粒子效应等效性实验研究[J] .核电子学与探测技术,2002,22(2):158-161.
    YANG Hailiang, LI Guozheng, JIANG Jinghe, et al. Experimental studies on equivalency of single event effect induced by protons and neutrons[J]. Nuclear Electronics & Detection Technology, 2002, 22(2): 158-161(in Chinese).
    [4] AGOSTINELLI S. Geant4—A simulation toolkit[J]. Nuclear Instruments and Methods in Physics Research A, 2003, 506: 250-303.
    [5] 贺朝会,李国政,罗晋生. CMOS SRAM单粒子翻转效应的解析分析[J]. 半导体学报,2000,21(2):175-176.
    HE Chaohui, LI Guozheng, LUO Jinsheng. Analysis of Single event upset in CMOS SRAMs[J]. Journal of Semiconductor, 2000, 21(2): 175-176(in Chinese).
    [6] Geant4 physics reference manual[M/OL]. 2005.http:∥www.cern.ch/geant4/usersupport.
    [7] STAPOR W J, MEYERS J P, LANGWORTHY J B, et al. Two parameter Bendel model calculations for predicting proton induced upset (ICs) [J]. IEEE Trans Nucl Sci, 1990, 37(6):1 966-1 973.
    [8] LAMBERT D, BAGGIO J. Analysis of quasi-monoenergetic neutron and proton SEU cross sections for terrestrial applications[J]. IEEE Trans Nucl Sci, 2006, 53(4): 1 890-1 896.
    [9] BAGGIO J, LAMBERT D. Single event upsets induced by 1-10 MeV neutrons in static-RAMs using mono-energetic neutrons sources[J]. IEEE Trans Nucl Sci, 2007, 54(6): 2 149-2 155.
计量
  • 文章访问数:  749
  • HTML全文浏览量:  0
  • PDF下载量:  1006
  • 被引次数: 0
出版历程
  • 收稿日期:  1899-12-31
  • 修回日期:  1899-12-31
  • 刊出日期:  2010-12-19

目录

    /

    返回文章
    返回