正脉冲电镀法制备φ</i>33 mm模拟镍源

正脉冲电镀法制备φ33 mm模拟镍源

摘要: mA量级直流恒流电源具有过保护电压较低的缺点，不适于制作大面积、高活度⁶³Ni放射源。本文以正脉冲电源为解决方案，系统研究在简单组分的镀镍溶液中，各工艺条件对电镀结果的影响。研究结果表明，在阴极电流密度为18 mA/cm²、室温、脉宽80%、频率5 kHz条件下电镀2.5 h，可获得95%以上的⁵⁸Ni沉积率。

Abstract: The DC constant current power with a magnitude of milliampere has one defect of lower protect voltage. This brought itself not suitable for the preparation of large area and high radioactivity ⁶³Ni. Based on a positive pulse power, the effects from some experiment conditions on the plating results in the simple plating solution were studied. The result shows that 95% of ⁵⁸Ni deposition rate is gained under the condition of cathode current density of 18 mA/cm², room temperature, pulse width of 80%, frequency of 5 kHz and plating time of 2.5 h.