FPGA单粒子效应的脉冲激光试验方法研究

Pulsed Laser Method for SEE Testing in FPGAs

摘要: 通过测试基于静态随机存储器（SRAM）的现场可编程门阵列（FPGA）芯片的单粒子效应，研究脉冲激光的试验方法，评估脉冲激光试验单粒子效应的有效性。研究表明，激光光斑聚焦深度和激光注量是影响脉冲激光单粒子效应试验的重要因素。试验发现，脉冲激光在较高能量时，单个激光脉冲会触发多个配置存储位发生单粒子翻转，造成芯片饱和翻转截面偏大。激光辐照芯片时，观察到芯片的内核工作电流以1～2 mA的幅度逐渐增加，在此期间器件工作正常。试验获得了Virtex2 FPGA芯片的静态单粒子翻转截面和翻转阈值。通过对比激光与重离子的试验结果发现，二者在测试器件单粒子翻转方面基本一致，脉冲激光可有效研究芯片的单粒子效应特性。

Abstract: The pulsed laser method for studying single event effect (SEE) in Virtex-2 FPGA was discussed, and the validity of laser stimulated SEE was evaluated. The laser focusing depth and laser fluence have important impact on the cross section of device under test. With high pulse energy, a single laser pulse could induce multiple-bit upsets (MBU). During irradiation of pulsed laser, the current of chip is increased by 1.2 mA and the chip works normally. A comparison between the results of heavy ion and pulsed laser shows that pulsed laser is valid to simulate SEE like heavy-ion.