基于正交设计的BiMOS运算放大器瞬时电离辐射效应影响因素分析

Analysis of Affecting Factors of Transient Ionizing Radiation Effects on BiMOS Op-amp by Orthogonal Design

摘要: 利用正交设计法设计了实验方案，可通过较少的实验获得满意的实验结果。在“强光一号”上对BiMOS工艺运算放大器CA3140进行了瞬时电离辐射效应实验，研究了不同因素对CA3140输出端瞬时电离辐射扰动恢复时间的影响，得到不同因素对恢复时间产生影响的主次顺序和显著水平，以及运算放大器在瞬时电离辐射环境下的最劣偏置条件。

Abstract: Using the orthogonal design method to arrange tests, a satisfactory result can be acquired with less experiments. The transient ionizing radiation effects experiments on BiMOS op-amp CA3140 were done on “Qiangguang-1” accelerator in this work to study the impact of different factors on the recovery time of CA3140 by transient ionizing irradiation. The sub-sequence and the significant level of the factors for the recovery time, as well as the worst bias conditions for CA3140 under transient ionizing irradiation were obtained.