Abstract: Radiation responses and variation characteristics of bipolar operational amplifier LM837 under the different energy and intensity of electron beams, and the different intensity but the same energy of electron beam irradiation were investigated. The parametric failure mechanism of LM837 caused by total dose radiation under different biases was discussed through analyzing the characteristics of LM837 post-irradiation annealing at room temperature, 100 ℃ and 125 ℃. The results show that the radiation damage of LM837 caused by 1.8 MeV electron irradiation is more significant than that by 1 MeV electron irradiation. Bias current under forward bias condition changes larger than that for zero biased. Annealing characteristics of LM837 after irradiation rely on the annealing temperatures, and this relationship is directly related to the increase of radiation induced-interface traps during irradiation.