Abstract: A neutron detector exploiting the ⁶Li(n, α)³H reaction was fabricated by using semiconductor epitaxial 4H-SiC as the detection medium. This work aimed to develop neutron detector with increased resistance to radiation effects, thus it can be used in harsh environments. The ⁶LiF neutron converter layer was deposited by magnetron sputtering method and was characterized by scanning electron microscope (SEM). While the reverse voltages of the studied diode were tested from 10 V up to 600 V, the reverse current was below 6.4 nA, indicating a successful formation of Schottky contact between epitaxial 4H-SiC and Ni. The resolution factor for 5.486 MeV alpha particles was acquired as 4.5% by means of a ²⁴¹Am source to this purpose. Response signals of neutron detector based on 4H-SiC Schottky diode to thermal neutron generated by critical assembly and slowed down by paraffin wax were obtained.