12位LC<sub>2</sub>MOS工艺数模转换器总剂量电离辐射效应

12位LC₂MOS工艺数模转换器总剂量电离辐射效应

摘要: 为了研究数模转换器在电离辐射环境中的可靠性，选取12位LC₂MOS工艺的数模转换器作为研究对象，使用⁶⁰Co γ射线源对其进行了不同剂量率、不同偏置条件下的总剂量电离辐射效应研究。试验结果表明，LC₂MOS工艺的数模转换器对辐射剂量率非常敏感，高剂量率条件下的辐射损伤较低剂量率条件下的更为显著；不同偏置条件下，其辐射损伤程度也有很大不同，正常工作偏置下的数模转换器辐射损伤较非工作偏置的辐射损伤更为明显。

Abstract: 12-bit digital-to-analog converter（DAC） in LC₂MOS technology was irradiated by ⁶⁰Co γ ray at high and low dose rates under two bias conditions to investigate total ionizing dose effect of the DAC. The results show that the DAC in LC₂MOS technology is sensitive to dose rates, and radiation failure level is more significant at high dose rate compared to low dose rate. Under different bias conditions, the radiation failure levels are different, and the radiation damage under the operating bias condition is more severe.