NAND型Flash存储器总剂量效应实验研究

Experimental Study on Total Ionizing Dose Effect of NAND Flash Memory

摘要: 针对镁光公司的4种NAND型Flash存储器，开展了不同辐照偏置下的总剂量效应实验及不同工艺尺寸器件的静态加电辐照实验。实验结果表明，器件在静态加电和动态辐照偏置下的总剂量效应相似，而与不加电辐照偏置下的总剂量效应不同。不同工艺尺寸器件的敏感参数有相同的变化趋势，由于受其他因素的综合影响，各敏感参数并不随工艺尺寸单调变化。

Abstract: Total ionizing dose (TID) effect experiments on four kinds of devices of different feature sizes from Micron Technology Company were carried out. Experiment results indicate that the phenomena of TID effect under the static bias is similar to that under the dynamic bias, but is different from the unbiased one. The sensitive parameters of different feature sizes have the similar change trend, but don’t vary with feature size monotonously because of the synthetic influence of other factors.