0.18 μm CMOS电路瞬时剂量率效应实验研究

Experimental Research of Transient Dose Rate Effect on CMOS Circuit With Feature Size of 0.18 μm

摘要: 利用脉冲激光源及脉冲X射线源，开展了超深亚微米CMOS反相器及CMOS静态随机存储器的瞬时剂量率效应实验，测量了CMOS电路瞬时剂量率效应，并与微米级电路的瞬时剂量率效应进行了比较。结果表明，对于CMOS电路，特征尺寸的缩小对其抗瞬时剂量率性能的影响与电路的规模有关。0.18 μm CMOS反相器的抗瞬时剂量率性能远优于微米级反相器，而0.18 μm CMOS静态随机存储器的抗瞬时剂量率性能远低于微米级及亚微米级存储器。

Abstract: The transient dose rate effect on the CMOS inverter and the CMOS static random access momery (SRAM) with feature size of 0.18 μm was studied under pulsed laser and pulsed X-ray. The transient dose rate effect on deep sub-micron CMOS circuit was measured and compared with that on μm CMOS circuit. The results show that 0.18 μm CMOS SRAM is more susceptible to transient dose rate environment than μm CMOS SRAM and μm CMOS inverter is more susceptible than 0.18 μm CMOS inverter.