65 nm工艺SRAM低能质子单粒子翻转实验研究

Single Event Upset Test of Low Energy Proton on 65 nm SRAM

摘要: 基于北京HI-13串列加速器质子源及技术改进工作，获得2～15 MeV低能质子束流。针对商业级65 nm工艺4M×18 bit大容量随机静态存储器（SRAM），开展了质子单粒子翻转实验研究。实验结果表明，低能质子通过直接电离机制可在存储器中引起显著的单粒子翻转，其翻转截面较核反应机制引起的翻转截面大2～3个数量级。结合实验数据分析了质子翻转机制、LET值及射程、临界电荷及空间软错误率等，分析结果表明，实验器件翻转临界电荷约为0.97 fC，而低能质子超过高能质子成为质子软错误率的主要贡献因素。

Abstract: Based on the Beijing HI-13 tandem accelerator proton beam source and technical improvements, 2.15 MeV low energy proton beam was obtained. Single event upset (SEU) test of low energy proton was carried out on commercial 65 nm 4M×18 bit large capacity SRAM. The test result shows that low energy proton can induce upset in SRAM through direct ionization mechanism, and the SEU cross section caused by this mechanism is about 2.3 magnitude order larger than that caused by nuclear reaction mechanism. With the test data, the proton upset mechanism, LET and range, critical charge, and on-orbit soft error rate (SER) were analyzed. The results show that the critical charge of the tested SRAM is about 0.97 fC and the low energy proton SER can be a significant contribution to total proton SER in space.