Burn-in对SRAM器件电离总剂量效应的影响

Influence of Burn-in on Total-ionizing-dose Effect of SRAM Device

  • 摘要: 针对辐照前高温老练(Burn-in)影响SRAM器件的抗总剂量辐射能力问题,进行了实验研究。选取了3种不同工艺尺寸SRAM存储器,利用60Co放射源对经过高温老炼和不经过高温老炼(No Burn-in)的样品进行了总剂量辐照实验,测量了辐照引起的SRAM器件的数据位翻转数,得到了Burn-in对不同工艺尺寸SRAM器件总剂量效应的影响规律。针对0.25 μm工艺SRAM器件开展了不同Burn-in温度影响器件抗辐射能力的实验研究,得到了器件抗辐射性能与Burn-in温度之间的关系。结果表明,SRAM器件的工艺尺寸越小,抗总剂量能力越强,且受Burn-in的影响越小;Burn-in时的温度越高,对器件的抗总剂量水平影响越大。

     

    Abstract: The influence of Burn-in on the total-ionizing-dose (TID) effect of SRAM device was investigated. SRAM devices of three different feature sizes were selected and irradiated by 60Co source with or without pre-irradiation Burn-in. Some parameters for radiation effect of SRAM device such as upset data, were measured, and the influence on the TID effect of different feature size SRAM devices with or without pre-irradiation Burn-in was obtained. The influence of different temperature Burn-in on radiation resistant capability of SRAM device was studied for 0.25 μm SRAM device. The results show that the smaller the device feature size is, the better the radiation-resistant capability of SRAM device is and the weaker the influence of Burn-in is. And the higher Burn-in temperature is, the more serious the influence of Burn-in on the total-dose radiation effect is.

     

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