瞬时电离辐射敏感开关设计及效应分析
Design and Effect Analysis of Sensitive Switch for Transient Ionizing Radiation
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摘要: 采用瞬时辐射敏感开关可避免电子器件在瞬时电离辐射环境下发生闩锁而失效或损毁。性能较好的开关须满足灵敏度高、抗辐射、抗干扰、驱动能力强等要求。本工作在RC延时电路的基础上设计了放电型和充电型两种辐射敏感开关,并通过瞬时电离辐射实验对两种开关的敏感度、关断时间稳定度、抗干扰能力进行了测试。结果表明,放电型开关的关断时间稳定度和抗干扰能力不及充电型开关,且探测单元采用晶闸管较采用二极管或三极管综合性能好;充电型开关更适合用于多次脉冲辐射环境,但开关中的缓冲单元输入端不能含有静电保护电路,否则影响开关关断时间。Abstract: Using transient radiation sensitive switch can prevent latch-up or damage for electronic devices in transient ionizing radiation environment. High performance switch should meet the requirements: high sensitivity, anti-radiation, anti-interference and high driving performance. Discharging-type and charging-type switches were designed based on RC delay circuit, and two switches’ sensitivity, cutoff duration stability and anti-interference performance were tested in transient ionizing irradiation experiments. The results show that the cutoff duration stability and anti-interference performance of discharging-type switch are worse than that of charging-type switch, and the detector in discharging-type switch is better to use silicon-controlled rectifier than to use diode or bipolar. Charging-type switch fits to be used in multiple-pulse radiation environment, but the input of the buffer in switch could not contain electro-static discharge (ESD) circuits because it could affect the cutoff duration of the switch.
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Keywords:
- transient ionizing radiation ,
- switch ,
- latch-up
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[1] 王建国,牛胜利,张殿辉,等. 高空核爆炸效应参数手册[M]. 北京:原子能出版社,2010:125-129. [2] ALEXANDER D R. Transient ionizing radiation effects in devices and circuits[J]. IEEE Transaction on Nuclear Science, 2003, 50(3): 565-582. [3] 陈杰,杜正伟. CMOS 反相器内部瞬态闩锁效应的脉冲宽度效应理论模型[J]. 强激光与粒子束,2013,25(5):1200-1204.CHEN Jie, DU Zhengwei. Theoretical modeling of effect of pulse width on microwave pulse triggered internal transient latch-up in CMOS inverters[J]. High Power Laser and Particle Beams, 2013, 25(5): 1200-1204(in Chinese). [4] 李瑞宾,陈伟,林东生,等. 体硅CMOS瞬时电离辐射下的自洽防闩锁机理分析[J]. 原子能科学技术,2013,47(9):1637-1641.LI Ruibin, CHEN Wei, LIN Dongsheng, et al. Analysis of auto-feed-back preventing latch-up mechanism in bulk CMOS devices exposed to transient ionizing irradiation[J]. Atomic Energy Science and Technology, 2013, 47(9): 1637-1641(in Chinese). [5] LI Ruibin, CHEN Wei, LIN Dongsheng, et al. Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing -radiation[J]. Science China Technological Sciences, 2012, 55(11): 3242-3247. [6] 许献国,胡健栋,赵刚,等. 用于抗闭锁的辐射敏感开关[J]. 微电子学,2005,35(6):581-583.XU Xianguo, HU Jiandong, ZHAO Gang, et al. Radiation sensitive switch for latch-up prevention[J]. Microelectronics, 2005, 35(6): 581-583(in Chinese).
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