中子辐照后CMOS工艺静态随机存储器瞬时电离辐射翻转效应实验研究

Experimental Research of Transient Ionizing Upset Effect on Neutron Irradiated CMOS SRAM

摘要: 对0.15 μm特征尺寸CMOS工艺商用静态随机存储器（SRAM）开展了中子辐照后的瞬时电离辐射效应实验研究，获得了中子辐照后SRAM器件的瞬时剂量率翻转效应规律，并与未经中子辐照SRAM器件的瞬时剂量率翻转效应规律进行对比。结果表明：中子辐照能有效提高CMOS工艺SRAM器件的瞬时剂量率翻转阈值，中子辐照引起的少数载流子的寿命降低是产生这种现象的主要原因。

Abstract: Transient ionizing radiation results were presented on neutron irradiated 0.15 μm commercial CMOS SRAMs, and the transient ionizing upset effect was observed. Compared with the non-neutron irradiated SRAMs, the neutron irradiated SRAMs exhibit higher tolerance in the transient ionizing environment. Neutron irradiation could enhance the transient ionizing upset threshold on CMOS devices. The neutron induced minority carrier lifetime reduction is the main reason for the experiment result.