EEPROM瞬时剂量率效应实验研究

Test Study on Transient Dose Rate Effect of EEPROM

摘要: 对3种不同容量的EEPROM开展了“强光一号”瞬时剂量率效应实验研究，测量电路的剂量率闩锁特性、高剂量率辐照下的数据保持能力及电路功能。辐照前，利用编程器在EEPROM中全地址写入55H，加电辐照，测量辐照后的电源电流；辐照后，再利用编程器对EEPROM的存储数据及读写功能进行测量。研究结果表明：EEPROM在瞬时辐照下，主要表现为外围电路的剂量率闩锁效应；在1.0×10⁹ Gy(Si)/s的高剂量率辐照下，3种电路存储的数据保持完好，未发生变化，存储器的擦除、编程及读出功能正常。给出了3种EEPROM电路的剂量率闩锁阈值，并对EEPROM的瞬时剂量率效应特点进行了分析。

Abstract: Transient dose rate effects were studied for three kinds of floating gate electrically erasable programmable read only memories (EEPROMs) using Qiangguang-1 accelerator. The dose rate latchup characterization and high dose rate memory retention were tested. Prior to exposure, each byte was written with a 55H (01010101). EEPROMs were powered on during exposure. After exposure, supply currents and memory data of EEPROMs were measured. The result shows that EEPROMs are susceptible to latchup. Average latchup levels are 2.0×10⁷, 2.3×10⁷ and 7.0×10⁶ Gy(Si)/s for AT28C256, AT28C010 and AT28C040. Following exposure to 1.0×10⁹ Gy(Si)/s, no data was lost and all EEPROMs can be read and written exactly.