Abstract: The pulsed laser facility for single event upset (SEU) sensitivity mapping was utilized to study SEU sensitivity mapping of SRAM IDT71256. To avoid the block of the metal layer in the front side of integrated circuit, the backside testing method was used. The experiment results show that the SEU sensitivity of the SRAM cell depends on the pattern of data stored in the memory cell. The SEU sensitivity mapping could be used to construct the corresponding SEU cross section, which is validated by the heavy ion beam test result.