Abstract:
The double-sided silicon strip detector (DSSD) was developed. The detector’s sensitive area is 48 mm×48 mm and the thickness is about 300 μm. Both of two sides surfaces are divided into equal 48 strips with width of 0.9 mm by oxide separation of 0.1 mm. The electronic performance (full depletion bias voltage, reverse leakage current and interstrip resistance) and detection performance (rise time, energy resolution and crosstalk) were tested. The reverse leakage current of each strip is less than 10 nA, and the rise time of preamplifiers for 5.157 MeV α particles is about 45 ns under bias voltage of -15 V. The junction side strips display an energy resolution of 0.6%-0.7% whereas the ohmic side strips show an unsatisfactory resolution. The crosstalk between neighboring strips is negligible on the junction side but interferes with each strip on the ohmic side.
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