Abstract: In order to verify the feasibility of laser simulation technology used in the research of SOI semiconductor device transient dose rate effect, the advantage and main principle of laser simulation technology were analyzed. Then the laser simulation experiment was done through using 0.13 μm SOI MOS single device chip, and the relation curve between transient photocurrent and laser energy as well as the linearized photocurrent formula was obtained. In addition, by comparing the experimental result with device TCAD simulation result, the equivalent relation between dose rate and laser energy at specific experimental condition was achieved. The result shows that laser simulation technology is effective in the research of SOI semiconductor device transient dose rate effect.