超短源-衬距离衬底转动蒸发制备自支撑同位素靶的技术研究

Study on Technology of Preparing Self-supporting Isotopic Target by Vacuum Evaporation of Ultra-short Source-substrate Distance Substrate Rotating

  • 摘要: 研究了超短源-衬距离衬底转动蒸发制备自支撑同位素靶的技术。通过计算不同条件下衬底转动蒸发沉积的靶膜厚度分布、材料利用率及不均匀性,确定了最佳的源-衬距离和源-轴距离的匹配值。研究了蒸发舟材料、蒸发时间和蒸发距离对沉积靶膜的影响。实验表明,制备ø10 mm的靶时,对于熔点分别为100~600、700~1200、1300~1600和1600~1900 ℃的材料,合适的源-衬距离分别为13、15、20和25 mm,对应的源-轴距离分别为12.5、13.0、14.5和16.0 mm。

     

    Abstract: The technology of preparing self-supporting isotopic target by the vacuum evaporation of ultra-short source-substrate distance substrate rotating was studied. The thickness distributions of targets were calculated with different geometric parameters. The material utilization and nonuniformity of targets were also calculated. The optimum source-shaft distances and source-substrate distances were determined. The influences of evaporation boat, evaporation distance and time on forming film were studied. The experiments indicate that in the preparation of a ø10 mm target, the appropriate source-substrate distances are 13, 15, 20 and 25 mm for the materials with melting points of 100-600, 700-1200, 1300-1600 and 1600-1900 ℃, respectively. And the corresponding source-shaft distances are 12.5, 13.0, 14.5 and 16.0 mm, respectively.

     

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