使用Geant4模拟CAPture电极CdZnTe探测器对γ射线的响应

Simulating Response to Gamma Ray of CdZnTe Detector with CAPture Electrode Using Geant4

  • 摘要: 采用CAPture电极CdZnTe探测器获取X射线注量谱,为建立ISO 4037-1:1996标准以外的参考辐射和计算辐射场特殊剂量物理量的约定真值提供基础。CdZnTe探测器的主要缺点是由于空穴迁移率寿命积过小,导致电荷收集不完全,全能峰左侧出现低能尾。CAPture电极CdZnTe探测器采用扩展阴极降低阴极附近区域的电场强度,弱化空穴输运对电荷收集效率的影响,实现对低能尾的抑制。但由于探测器内的电场不再均匀,电荷收集效率无法用Hecht方程计算。本文根据Shockley-Ramo原理建立了CAPture电极CdZnTe探测器电荷收集效率计算公式,用有限元分析软件模拟了探测器内的电场分布。进而用Geant4软件开展了蒙特卡罗仿真计算,确定了载流子迁移率寿命积,并取得了与实测结果基本一致的脉冲幅度谱,为建立探测器的响应矩阵奠定了基础。

     

    Abstract: Aiming to provide a basis for establishing reference radiation beyond the ISO 4037-1:1996 standard and calculating the conventional true values of special dose quantities of the radiation field, fluence spectrum of X-ray is obtained using a CdZnTe detector with CAPture electrode. The main drawback of the CdZnTe detector is the low energy tail on the left side of the full energy peak due to insufficient charge collection caused by the small mobility-lifetime product. The CdZnTe detector with CAPture electrode reduces the electric field strength in the vicinity of the cathode through utilizing the extended cathodes, which weakens the effect of hole transport on charge collection efficiency and curbs the low energy tail. However, the charge collection efficiency cannot be calculated using the Hecht equation as the electric field in the detector is no longer uniform. In this paper, the formula for calculating the charge collection efficiency of the CdZnTe detector with CAPture electrode was established based on the Shockley-Ramo principle, and the electric field strength in the detector was simulated with finite element analysis software. Furthermore, Monte Carlo simulation was carried out using Geant4. As a result, the mobility-lifetime product was determined, and the pulse height spectra calculated by Geant4 are consistent with the measured results, laying the foundation for establishing the response matrix of the detector.

     

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