钨/铜界面处氢原子与空位相互作用的第一性原理计算

Interaction of Hydrogen Atom and Vacancy in W/Cu Interface: Ab initio Calculation

  • 摘要: 钨/铜界面是聚变堆偏滤器的重要连接界面,在高热流密度和强中子辐照下会成为氢同位素渗透滞留的高速通道和捕获陷阱。本文利用第一性原理方法研究了钨/铜界面处氢原子与点缺陷的相互作用,考察了氢原子的滞留行为和空位在界面处的形成行为,分析了氢原子的优先占据位置及氢原子与空位的作用机理。结果表明:在钨/铜界面中,氢原子稳定存在于钨/铜界面中间及铜晶格中;对于空位,界面附近的铜空位不稳定,会自发移动到钨/铜界面的顶端表面,而钨空位相对稳定存在;相比于铜空位,钨空位吸引氢原子的能力更强。氢原子的存在会抑制铜空位的迁移现象,从而可能形成氢泡。

     

    Abstract: W/Cu interface, as an important material interface of divertor in fusion reactor, is a strong trap of the hydrogen isotopes under high heat flux and strong neutron irradiation. Ab initio calculation was used to investigate the interaction of hydrogen atom and point defect in W/Cu interface, the behavior of hydrogen atom retention and point defect formation, the priority position of hydrogen atom and the mechanism of interaction of hydrogen atom and vacancy. The result shows that hydrogen atoms prefer to exist among the interface and copper lattice steadily. As for vacancy, vacancy copper near the interface is unstable to move to the upper face, however, vacancy tungsten almost presents a stable existence phenomenon. Compared with vacancy copper, vacancy tungsten has the stronger ability to attract hydrogen atom. Meanwhile, the existence of hydrogen atom would suppress the migration of vacancy copper, and it may cause the bubble of hydrogen.

     

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