Abstract:
Based on the test site at the Qinghai Tibet Plateau with an altitude of 4 300 m, atmospheric neutron single event effects of a 65 nm high speed large area static random access memory (SRAM) array were measured in real time. By breaking through key technologies such as effect screening, intelligent remote measurement and control, a total of 39 single event upset were observed during the 153 d test period, of which multiple cell upset (MCU) accounts for 23%, and the largest MCU is 9 bits. The contribution ratios of high energy neutron, thermal neutron and alpha particle were analyzed in detail, and based on the multi ground neutron flux data, the single bit upset (SBU) and MCU failure in time (FIT) at Beijing ground and 10 km high altitude application were deduced. It is found that the main cause of soft error on the ground is the alpha particle. As the altitude increases, the contribution of atmospheric neutron to soft error increases significantly. All MCUs are caused by high energy neutron, and the MCU FIT value at an altitude of 10 km in Beijing is obviously increased. Its proportion increases from 8% of the ground to 26%. In combination with the device layout, an in depth analysis of the MCU generation mechanism was carried out. Finally, a goal oriented optimization method of memory soft error hardening strategy was proposed.
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