10 MeV Proton Radiation Effect on 8-Transistor CMOS Star Sensor Performance

10 MeV质子辐射效应对基于8T-CMOS星敏感器性能影响研究

  • 摘要: 为分析星敏感器性能下降和姿态测量精度下降的原因,研究了10 MeV质子辐照下8T全局曝光CMOS图像传感器(CIS)电离总剂量(TID)效应和位移损伤效应对星敏感器典型性能参数的影响。分析了CMOS图像传感器暗电流、暗信号非均匀性和光响应非均匀性随位移损伤剂量(DDD)的变化规律和星敏感器星对角距精度、质心定位精度随DDD的退化规律。该研究从系统角度分析了空间辐射对星敏感器性能参数的影响,为星敏感器在轨姿态误差测量和修正技术的研究奠定基础,同时也为高精度星敏感器的设计提供了一定的理论依据。

     

    Abstract: The effects of total ionizing dose (TID) and displacement damage from proton irradiation on an 8transistor global shutter exposure CMOS image sensor (CIS) within a star sensor were presented to analyze the sources of star sensor performance degradation and the decrease of attitude measurement accuracy. The dark current, dark signal nonuniformity, and photon response nonuniformity versus the displacement damage dose (DDD) were investigated. The star diagonal distance accuracy, and star point centroid positioning accuracy of the star sensor versus the DDD were also analyzed. The influence of space radiation on star sensor performance parameter was analyzed innovatively from a system level point of view. This work lays the foundation for the research of star sensor attitude error measurement and correction technology, and also provides some theoretical basis for the design of highprecision star sensor.

     

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