SIP外壳内受X射线激发的电磁干扰环境

Simulation of X-ray-induced EMI Environment in Shell of SIP

  • 摘要: 本文估算了系统级封装(SIP)外壳内,受脉冲X射线辐照产生的电磁干扰(EMI)环境。首先通过蒙特卡罗数值方法计算了可伐合金及印制电路板(PCB)表面受X射线辐照激发电子的产额和能谱,并基于该计算结果开展了电子自洽运动的数值模拟。利用时域有限差分法(FDTD)和粒子模拟技术(PIC)对电子产生电磁场的过程进行了仿真。计算结果表明,电子的运动使得电子发射面附近的EMI环境最强。此外,从频谱可看出,电磁干扰主要集中在低频部分,且频率取决于X射线的时间参数。通过减小SIP外壳的受辐照面积及高度可降低外壳内的EMI环境强度。

     

    Abstract: This article aims to evaluate the electromagnetic interference (EMI) environment in the shell of a system in package (SIP) while irradiated by a pulsed Xray fluecne. First, the yields and energy spectra of photoelectrons induced by Xray were calculated using Monte Carlo numerical simulations. These results were used to simulate the selfconsistent movement of photoelectrons emitting from the Kovar alloy shell and the dielectrical material of printed circuit board (PCB). The electromagnetic pulse (EMP) generated by these photoelectrons were calculated using finite difference timedomain (FDTD) method and particleincell (PIC) method. An analysis of the EMI environment in the shell of SIP was performed by numerical results. It is shown that the EMI environment adjacent to the emission surfaces turns more severe because of the movement of photoelectrons. And most of the radiation energy is located at lowfrequency parts, which depends on the characteristic time of Xray. Also, reducing the area of surfaces illuminated by Xray and the height of SIP can lessen the threat from EMI.

     

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