Abstract: In order to evaluate the intrinsic radiation hardness of the fin field effect transistor (FinFET) device, the characteristics of single event transient (SET) were studied by 3D technology computeraided design (TCAD) simulations in the 14 nm FinFET technology. The results show that the singleevent sensitivity varies according to LET values and incident positions. The width of SET pulse broadens with the increase of LET values. Besides, the response of SET has a complicated relationship with the strike location. For lowLET values (LET≤1 MeV·cm2/mg), the SET response has a strong dependency on the place where it is struck by heavy ions. For highLET values (LET>10 MeV·cm2/mg), the strike location dependency of the SET response diminishes due to the enhanced substrate charge collection.