GaN基MOSFET低温特性的实验表征及分析

Testing and Characterization of GaNbased MOSFET at Space Cryogenic Temperature

摘要: 深空探测活动需要电子元器件在极端低温环境（T<40 K）中能正常使用。基于低温环境下的应用需求，本文研究了GaN基MOSFET在15～300 K温区的低温环境效应。实验结果显示，随着温度逐渐从300 K降低到15 K，饱和漏极电流和阈值电压均增大。低温下，转移特性和输出特性均变好。分析发现，较高的电子迁移率是GaN基MOSFET低温下电特性变化的主要原因。

Abstract: Deep space exploration applications require electronics which are capable of operation at extremely low temperatures (T<40 K). Based on the application requirements of cryogenic temperatures, the effects of cryogenic temperatures from 15 K to 300 K on GaNbased MOSFET were investigated in this paper. The experimental results show that the saturated drain current and threshold voltage are increased as the device is cooled down to 15 K. Both output characteristics and transfer characteristics are enhanced as temperature decreases. The increase of electron migration rate could be the main reason for the shift of electrical parameters of GaNbased MOSFET.