GaN基MOSFET低温特性的实验表征及分析

肖一平, 王雅宁, 刘超铭, 张延清, 齐春华, 王天琦, 马国亮, 霍明学, 陆裕东, 岳龙

肖一平, 王雅宁, 刘超铭, 张延清, 齐春华, 王天琦, 马国亮, 霍明学, 陆裕东, 岳龙. GaN基MOSFET低温特性的实验表征及分析[J]. 原子能科学技术, 2021, 55(12): 2231-2236. DOI: 10.7538/yzk.2021.youxian.0537
引用本文: 肖一平, 王雅宁, 刘超铭, 张延清, 齐春华, 王天琦, 马国亮, 霍明学, 陆裕东, 岳龙. GaN基MOSFET低温特性的实验表征及分析[J]. 原子能科学技术, 2021, 55(12): 2231-2236. DOI: 10.7538/yzk.2021.youxian.0537
XIAO Yiping, WANG Yaning, LIU Chaoming, ZHANG Yanqing, QI Chunhua, WANG Tianqi, MA Guoliang, HUO Mingxue, LU Yudong, YUE Long. Testing and Characterization of GaNbased MOSFET at Space Cryogenic Temperature[J]. Atomic Energy Science and Technology, 2021, 55(12): 2231-2236. DOI: 10.7538/yzk.2021.youxian.0537
Citation: XIAO Yiping, WANG Yaning, LIU Chaoming, ZHANG Yanqing, QI Chunhua, WANG Tianqi, MA Guoliang, HUO Mingxue, LU Yudong, YUE Long. Testing and Characterization of GaNbased MOSFET at Space Cryogenic Temperature[J]. Atomic Energy Science and Technology, 2021, 55(12): 2231-2236. DOI: 10.7538/yzk.2021.youxian.0537

GaN基MOSFET低温特性的实验表征及分析

Testing and Characterization of GaNbased MOSFET at Space Cryogenic Temperature

  • 摘要: 深空探测活动需要电子元器件在极端低温环境(T<40 K)中能正常使用。基于低温环境下的应用需求,本文研究了GaN基MOSFET在15~300 K温区的低温环境效应。实验结果显示,随着温度逐渐从300 K降低到15 K,饱和漏极电流和阈值电压均增大。低温下,转移特性和输出特性均变好。分析发现,较高的电子迁移率是GaN基MOSFET低温下电特性变化的主要原因。

     

    Abstract: Deep space exploration applications require electronics which are capable of operation at extremely low temperatures (T<40 K). Based on the application requirements of cryogenic temperatures, the effects of cryogenic temperatures from 15 K to 300 K on GaNbased MOSFET were investigated in this paper. The experimental results show that the saturated drain current and threshold voltage are increased as the device is cooled down to 15 K. Both output characteristics and transfer characteristics are enhanced as temperature decreases. The increase of electron migration rate could be the main reason for the shift of electrical parameters of GaNbased MOSFET.

     

  • [1] DENG Xiaoxiang, LI Peng, DAI Chaofan, et al. Enhanced GaN MOSFET and Si MOSFET performance comparison in singlephase fullbridge inverters[J]. Highpower Diversion Technology, 2017(6): 48-51.
    [2] SHI Yuanyuan. Study on the reliability mechanism of defects in siliconbased GaN power devices[D]. Chengdu: University of Electronic Science and Technology of China, 2019.
    [3] CHOW T P. Highvoltage SiC and GaN power devices[J]. Microelectronic Engineering, 2006, 83(1): 112-122.
    [4] KHAN M A, SIMIN G, PYTEL S G, et al. New developments in gallium nitride and the impact on power electronics[C]∥2005 IEEE 36th Power Electronics Specialists Conference. USA: IEEE, 2005: 15-26.
    [5] REN F, HONG M, CHU S N G, et al. Effect of temperature on Ga2O3 (Gd2O3)/GaN metaloxidesemiconductor fieldeffect transistors[J]. Applied Physics Letters, 1998, 73(26): 3893-3895.
    [6] ZHANG Shufang, HAN Ying. Temperature response to the transient characteristics of GaN MOSFET[J]. Think Tank Era, 2019(35): 187189.
    [7] LEE C T, CHEN H W, LEE H Y. Metaloxidesemiconductor devices using Ga2O3 dielectrics on ntype GaN[J]. Applied Physics Letters, 2003, 82(24): 4304-4306.
    [8] CLAEYS C, SIMOEN E, KOSHEVAYA S V. Perspectives of the cryoelectronics for the year 2000[J]. Journal de Physique Ⅳ, 1998, 8(3): 3-315.
    [9] QIAN Zhaoming, ZHANG Junming, SHENG Kuang. Application status and development of electronic devices[J]. China Journal of Electrical Engineering, 2016, 34(29): 5149-5161.
    [10] LEE K W, CHOU D W, WU H R, et al. GaN MOSFET with liquid phase deposited oxide gate[J]. Electronics Letters, 2002, 38(15): 829-830.
    [11] SUN J Y C, TAUR Y, DENNARD R H, et al. Submicrometerchannel CMOS for lowtemperature operation[J]. IEEE Transactions on Electron Devices, 1987, 34(1): 19-27.
    [12] ALLNUTT J F. Testing and characterization of silicon devices at cryogenic temperatures[D]. USA: University of Maryland, 2007.
    [13] HAEFFNER T D, KELLER R F, JIANG R, et al. Comparison of totalionizingdose effects in bulk and SOI FinFETs at 90 and 295 K[J]. IEEE Transactions on Nuclear Science, 2019, 66(6): 911-917.
    [14] KELLER R F. Total ionizing dose effects in silicon bulk FinFETs at cryogenic temperatures[D]. [S. l.]: [s. n.], 2017.
    [15] RUMYANTSEV S L, SHUR M S, LEVINSHTEIN M E, et al. Channel mobility and onresistance of vertical double implanted 4HSiC MOSFETs at elevated temperatures[J]. Semiconductor Science and Technology, 2009, 24(7): 075011.
计量
  • 文章访问数:  374
  • HTML全文浏览量:  0
  • PDF下载量:  483
  • 被引次数: 0
出版历程
  • 刊出日期:  2021-12-19

目录

    /

    返回文章
    返回