不同温度辐照下栅控双极晶体管的总剂量效应参数退化研究

Investigation of Ionization-induced Parameter Degradation in GLPNP Bipolar Transistors at Different Temperatures

摘要: 本文选用特殊测试结构的栅控横向PNP(gated lateral PNP, GLPNP)双极晶体管为研究对象，在不同辐照温度下，得到了温度和剂量对GLPNP双极晶体管辐射损伤的响应机制。试验结果表明，温度和剂量是影响界面陷阱电荷生成和退火动态平衡的关键因素。在低剂量阶段，高温辐照会导致GLPNP双极晶体管辐射损伤加快，在高剂量阶段，适当降低温度会促进界面陷阱电荷的生长。

Abstract: In this paper, the special test structure gated lateral PNP (GLPNP) bipolar transistors, irradiated in different temperatures, were selected to investigate the response mechanism of temperature and dose to radiation damage. The results show that the both of temperature and dose play primary role in determining the dynamic balance of the interfacetrap buildup and annealing. Elevating temperature during irradiation can contribute to the increase of degradation at low dose level, and further decrease in temperature will enhance interfacetrap buildup at high dose level.