0.45~4 MV杆箍缩二极管阳极等离子体研究

Study on Plasma Emission from Anode Rod of 0.45-4 MV Rod-pinch Diode

  • 摘要: 为提升对杆箍缩二极管物理机制的认识,提升模拟算法的准确性,使用相空间文件作为信息传递媒介,将PIC与蒙特卡罗计算方法相结合,实现了杆箍缩二极管从加载电压到剂量计算全过程模拟。本工作给出了PIC模拟计算中的阳极等离子体生成函数,使得数值计算模型能在0.45~4 MV的电压范围内,对杆箍缩二极管的电流、剂量进行准确的计算,与实验结果相比,计算结果相对误差控制在20%以内。利用获得验证的PIC模型,以加载电压为1 MV为例,用模拟手段对等离子体生成速率与电子运动状态之间的关系进行了研究,总结了电子箍缩的物理特性。相较于先前模拟工作仅能给出趋势性的预测结果,该模型的准确性与通用性均获得提升,同时等离子体对电子运动状态影响的研究结果为新型强流X射线二极管的研发提供了基础。

     

    Abstract: Rod-pinch diode is widely used in flash X-ray machines of various voltage levels. Its structure is very simple and the radiation dose is high with a small focal spot. The most important thing in the physics of rodpinch diode is to study the emission state of electrons and ions under different voltage-loading waveforms. At present, the theory of electron explosion emission has been mature, but there is a lack of specific research on the property of plasma emission except that anode plasma is indispensable. Therefore, the study of anode plasma emission of the rod-pinch diode is helpful to deeply understand the influencing factor of plasma on radiation dose. Improving the radiation imaging performance of rod-pinch diode by adjusting plasma emission, like pre-filled rod-pinch diode, PIC and Monte Carlo simulations were used in this paper. PIC simulation was used to obtain the peak current of the rod-pinch diode and the phase space file storing the electron bombarding the anode. The phase space file was used as the input source file of Monte Carlo to obtain the simulated radiation dose of the rod-pinch diode. Three X-ray devices of 450 kV, 1 MV and 4 MV were used to obtain the diode current and radiation dose at 1 m of the rod-pinch diode at the voltage level of 0.45-4 MV. By comparing the simulation result with the experimental result, the correct plasma emission function of the anode rod was obtained. According to the above methods, it is confirmed that the plasma emission function is closely related to the energy and power of electron bombarding the anode rod, and the ion emission function of anode rod with different diameters at the voltage level of 0.45-4 MV is obtained. At the same time, it is found that the position of the electron bombardment anode rod corresponds to the position of plasma emission. It shows that the heat transfer of electron deposition energy on the anode rod cannot be considered in the time range of X-ray emission. After the anode ion emission function obtained in this paper was added to the numerical calculation model, the relative error between the simulated peak current and radiation dose and the real experimental value is within 20%, which can accurately predict the diode current and radiation dose in the flash X-ray experiment. Using this model, the relationship between plasma density and electron bombarding anode rod was studied. Electrons bombarding the side of the anode rod with near grazing incidence and the end face of the anode rod can obtain a higher X-ray radiation dose. Combined with 3D modeling technology, the simulation method can fully evaluate the penetration ability of X-ray in a specific object, to scientifically select the input voltage level in the formal experiment. At the same time, combined with material science and related technology, the model can also be used for the design of a new X-ray diode.

     

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