摘要: Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits, due to its exceptional advantages in terms of flexibility, safety, convenience, and precision. In recent years, wide band gap materials, known for their strong bonding and high ionization energy, have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments. Consequently, there is a growing need for comprehensive research on the dose rate effects of wide band gap materials. In response to this need, the use of laser-assisted simulation technology has emerged as a promising approach, offering an effective means to assess the efficacy of investigating these materials and devices. This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices. Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided. Moreover, to validate the accuracy of the conversion factors, pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes. The results demonstrate that pulsed laser radiation and γ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes, with correlation coefficients of 0.98 and 0.974, respectively. This finding reaffirms the effectiveness of laser-assisted simulation technology, making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.