重离子引起SiC MOSFET栅氧化物潜在损伤研究

于庆奎; 曹爽; 张琛睿; 孙毅; 梅博; 王乾元; 王贺; 魏志超; 张洪伟; 张腾; 柏松

doi:10.7538/yzk.2023.youxian.0576

重离子引起SiC MOSFET栅氧化物潜在损伤研究

于庆奎^1,2,
曹爽^1,2,
张琛睿¹,
孙毅^1,2,
梅博^1,2,
王乾元^1,2,
王贺^1,2,
魏志超^1,2,
张洪伟^1,2,
张腾³,
柏松³

1.
中国空间技术研究院宇航物资保障事业部,北京100029
2.
国家级抗辐照应用技术创新中心,北京100029
3.
南京电子器件研究所宽禁带半导体电力电子器件国家重点实验室,江苏南京211111

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- 刊出日期: 2023-12-19

Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions

1.
China Aerospace Components Engineering Center, Beijing 100029, China
2.
National Innovation Center of Radiation Technology, Beijing 100029, China
3.
State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, Nanjing 211111, China

摘要

摘要: 针对空间应用，开展SiC MOSFET单粒子效应试验研究。在加速器上用重离子辐照1 200 V SiC MOSFET，离子线性能量传输（LET）在0.26~118 MeV·cm²/mg之间，辐照中被试器件加50~600 V静态漏源偏置电压、栅源短接，实时测量电特性，进行辐照后栅应力（PIGS）测试。试验结果发现，50~100 V偏置电压下，离子引起瞬态电流，PIGS测试栅失效。分析认为离子引起栅氧化物潜在损伤，PIGS测试过程中，潜在损伤进一步退化导致栅失效。氧化物潜在损伤不仅与辐照偏置电压有关，还与入射离子LET和注量有关。PIGS测试需要的栅应力时间与潜在损伤程度有关，可超过300 s。并给出了电荷累积损伤模型。模型进行SiC MOSFET单粒子效应评估时，应考虑离子引起栅氧化物潜在损伤的影响，需根据轨道和任务周期确定试验离子注量，根据应用情况确定辐照偏置电压，并评估确定PIGS测试栅应力时间。
- SiC MOSFET ,
- 辐射效应 ,
- 单粒子效应 ,
- 单粒子烧毁 ,
- 单粒子栅穿 ,
- 潜在损伤 ,
- 辐照后栅应力
Abstract: The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear energy transfer (LET) of ions was 0.26-118 MeV·cm²/mg. The static drain-source bias voltage of 50-600 V was applied on the devices under test and the electrical characteristics were measured during irradiation. The post irradiation gate stress (PIGS) test was performed. The experiment results show that single event transient current (SETC) is induced by heavy ions at 50-100 V bias voltage, single event leakage current (SELC) is induced by heavy ions at 200 V bias voltage, and single event burnout is induced by heavy ions at 200-600 V bias voltage. The experiment results confirm that the gate oxide of SiC MOSFET is the most sensitive to single event effect. Biased at about 5% of the rated breakdown voltage, the latent gate oxide damage may be induced by heavy ions. The latent gate oxide damage may further degrade to lead the gate failure during PIGS test. The latent gate oxide damage is the function of incident ion LET and bias voltage, as well as ion fluence, which is a cumulative effect. Dependent on the severity of latent gate oxide damage, the gate stress time to trigger gate failure may exceed 300 s. The mechanism of accumulate charge damage was proposed. The electric field in the gate oxide layer increases due to charges generated by the incident ions at different locations. The accumulate damage of gate oxide is caused. It is necessary to evaluate the effect of latent gate oxide damage induced by heavy ions in SiC MOSFETs for single event effect test for space application, the ion fluence used should be calculated based on the orbit and mission period, and the appropriate gate stress time should be evaluated for PIGS test.
- SiC MOSFET ,
- radiation effect ,
- single event effect ,
- single event burnout ,
- single event gate rupture ,
- latent damage ,
- post irradiation gate stress

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参考文献(19)

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文章访问数: 123
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重离子引起SiC MOSFET栅氧化物潜在损伤研究

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Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions

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