Abstract: In the context of radiation monitoring for occupational safety, personal dosimeters require highly sensitive and energy-efficient electronic interfaces. This work presented a low-power consumption and low-noise CMOS integrated circuit specifically tailored for personal dosimeters incorporating boron nitride (BN) neutron detectors. As a fourth-generation wide band gap semiconductor, the BN detector exhibited exceptionally low room-temperature leakage current (below 1 pA), enabling reliable operation without cryogenic cooling. Its unique feature of directly converting incident neutron signals into charge signals via the ¹⁰B(n,α)⁷Li reaction eliminated the need for an additional conversion layer, streamlining the detection chain. The front-end ASIC architecture was comprised by four critical modules: a low-noise charge-sensitive preamplifier (CSA), a CR-RC shaping filter, a precision reference current source, and a hysteresis voltage discriminator. The CSA employed gain bootstrapping structure with a NMOS input, where the gate-source voltage of the input transistor is dynamically stabilized to enhance noise performance. This configuration achieves a transimpedance gain of 5 mV/fC while maintaining a low input-referred noise floor. A key innovation lies in the dynamically adjustable feedback resistor network, which addresses baseline drift induced by detector leakage. The structure integrates a differential pair (M1-M8) with a current mirror biasing mechanism and a low-pass filter (RC=10 μs), creating a feedback loop that continuously compensates for slow leakage currents. This adaptive design ensures the circuit remains linear across a wide range of radiation fluxes (10² to 10⁶ h⁻¹), with an integral nonlinearity (INL) of ＜1%. Fabricated in SMIC 55 nm CMOS technology, the circuit operates at a 1.2 V supply voltage, achieving a single-channel power consumption of 0.22 mW (186 μA current draw). Post-layout simulations demonstrate an equivalent noise charge (ENC) of 3e⁻ at zero detector capacitance, degrading to 1.21e⁻/pF with increasing capacitance, making it suitable for detectors with up to 10 pF capacitance. The shaping filter’s 5 μs peaking time optimizes the signal-to-noise ratio for typical neutron-induced charge pulses (rise time is about 1 μs), ensuring reliable pulse counting in noisy environments. This design exemplifies the integration of advanced semiconductor technology with nuclear detection principles, offering a compact, low-power solution for next-generation personal dosimetry systems. The dynamically adaptive feedback mechanism sets a new benchmark for front-end stability in radiation detection applications, particularly for portable devices requiring long-term operation on battery power.