注入离子能量对超薄PI薄膜表面铜层结构及性能的影响

Effect of Ion Implantation Energy on Structure and Property of Copper Layer on Surface of Ultra-thin PI Films

  • 摘要: 真空镀膜技术是实现超薄聚酰亚胺薄膜的表面金属化的重要方向,高能离子注入是改善PI薄膜表面活性、制备界面功能层的关键前处理手段。本文利用MEVVA离子注入在25 μm厚聚酰亚胺薄膜表面构筑高活性过渡界面,再以直流磁控溅射镀膜方法沉积金属铜涂层,研究不同注入能量对PI薄膜及铜层表面形貌、化学成分、表面特性等微观性能的影响,对铜层展开电性能、膜基结合强度等宏观性能测试及分析。研究结果表明,随着注入能量的升高,PI薄膜大分子链结构发生断裂和重组,粗糙度线性降低,在此基础上沉积铜膜的晶粒尺寸和晶面间距逐渐减小。在注入能量为40 keV时涂层方块电阻为36 mΩ/sq,结合强度达5.81 MPa,呈现最优的电学与力学性能,说明铜膜的宏观综合性能是晶粒结构、杂质分布及缺陷密度、应力状态等多因素协同作用的结果。由此可见,采用适当能量范围内的金属离子注入作为前处理步骤可显著提升柔性覆铜板的电性能和结合强度,也为未来超薄无胶二层柔性覆铜板的工业化制备提供思路。

     

    Abstract: With the rapid development of flexible electronics, wearable devices, high-frequency communications, and the aerospace industry, there is a growing demand for flexible copper-clad laminates that combine lightweight construction, high flexibility, and excellent electrical performance. The use of vacuum deposition technology to metallize the surface of ultra-thin polyimide films is a major current trend. However, due to the high chemical inertness and poor wettability of polyimide, it is difficult to achieve a highly reliable bond with the metal layer, which limits the application of this technology in ultra-thin, adhesive-free, two-layer flexible copper-clad laminates. At this stage, high-energy ion implantation is regarded as a key pretreatment method for enhancing the adhesion strength between the film and the substrate, as it can induce physicochemical changes on the surface of the polymer, such as bond breaking, cross-linking, carbonization, and the generation of active groups, thereby effectively improving surface activity and forming a functional transition layer. Based on this, this study utilized MEVVA ion implantation technology to create a highly reactive interface on the surface of a 25 μm thick polyimide film, followed by the deposition of a copper coating via DC magnetron sputtering. By analyzing the effects of different ion implantation energies on the microstructural properties of PI films and copper layers, including surface morphology, chemical composition, and surface characteristics, as well as macroscopic properties such as the electrical performance of the copper layer and the film-substrate bond strength, the study on the mechanisms by which ion implantation influences surface metallization was completed. The results indicate that as the incident energy increases, the macromolecular chains in the PI film undergo fragmentation and reorganization, leading to a linear decrease in surface roughness; consequently, the grain size and intergranular spacing of the copper film deposited on this substrate gradually decrease. When the implantation energy is 40 keV, the coating exhibits a sheet resistance of 36 mΩ/sq and a bond strength of 5.81 MPa, demonstrating optimal electrical and mechanical properties. This indicates that the macroscopic comprehensive performance of the copper film is jointly governed by multiple factors, including grain structure, impurity distribution, defect density, and stress state. In summary, the use of metal ion implantation within an appropriate energy range as a pretreatment process can significantly improve the electrical properties and film-substrate adhesion strength of flexible copper-clad laminates, providing a viable approach for the industrial production of ultra-thin, adhesive-free, two-layer flexible copper-clad laminates. Through precise interface control, the deep integration of ion implantation and vacuum deposition technologies is expected to lead to the development of new, highly reliable fabrication techniques for flexible devices.

     

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