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WANG Zu-jun, CHEN Wei, ZHANG Yong, TANG Ben-qi, XIAO Zhi-gang, HUANG Shao-yan, LIU Min-bo, LIU Yi-nong. Simulation of Dark Current Increase in Si PIN Photodiode Induced by Neutron Irradiation[J]. Atomic Energy Science and Technology, 2010, 44(2): 220-223. DOI: 10.7538/yzk.2010.44.02.0220
Citation: WANG Zu-jun, CHEN Wei, ZHANG Yong, TANG Ben-qi, XIAO Zhi-gang, HUANG Shao-yan, LIU Min-bo, LIU Yi-nong. Simulation of Dark Current Increase in Si PIN Photodiode Induced by Neutron Irradiation[J]. Atomic Energy Science and Technology, 2010, 44(2): 220-223. DOI: 10.7538/yzk.2010.44.02.0220
shu

Simulation of Dark Current Increase in Si PIN Photodiode Induced by Neutron Irradiation

  • 1.

    Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China

  • 2.

    Northwest Institute of Nuclear Technology, Xi’an 710024, China

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  • Received Date: December 31, 1899
  • Revised Date: December 31, 1899
    Graphical Abstract
    • Abstract
  • The mechanism of dark current increase in Si PIN photodiode induced by neutron irradiation was analyzed. The device physics and neutron irradiation models were presented to simulate dark current in Si PIN photodiode by MEDICI software. The primary regularity of dark current increase in Si PIN photodiode was concluded by neutron irradiation with the energy of 1 MeV and at the fluence of 1010 -1014 cm-2. The simulation results are in agreement with the experimental results from relevant literature.
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    • References (7)
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