期刊创办：钱三强
刊名题字：郭沫若
期刊创办：钱三强
刊名题字：郭沫若
| Citation: |
Soft Error Evaluation in SRAM Using α Sources[J]. Atomic Energy Science and Technology, 2006, 40(增刊): 192-195. DOI: 10.7538/yzk.2006.40.suppl.0192
|
| [1] |
O’GORMAN. The effect of cosmic rays on the soft error rate of a DRAM at ground level[J]. IEEE Trans Electron Devices, 1994, 41:553-559.
|
| [2] |
NORMAND E. Single event upset at ground level[J]. IEEE Trans Nucl Sci, 1996,43: 2 742-2 728.
|
| [3] |
NORMAND E. Single event effects in avionics[J]. IEEE Trans Nucl Sci, 1996, 43:461-468.
|
| [1] | SUN Yifan, BAI Liang, SHUANG Xiaochuan, TIAN Wenbo, YOU Hongjun. Research and Evaluation on SEM-based FPGA Anti-SEU Solution[J]. Atomic Energy Science and Technology, 2022, 56(4): 742-748. DOI: 10.7538/yzk.2021.youxian.0713 |
| [2] | LI Lili, WANG Dong, LIU Xiajie, LYU Yonghong, LI Kunfeng, CAI Li, SHI Shuting, HUI Ning, GUO Gang. Micro-beam and Broad-beam Experimental Research of Multiple-cell Upset in 65 nm Dual-well CMOS SRAM[J]. Atomic Energy Science and Technology, 2018, 52(7): 1326-1334. DOI: 10.7538/yzk.2017.youxian.0577 |
| [3] | CAI Li, LIU Jiancheng, QIN Yingcan, LI Lili, GUO Gang, SHI Shuting, WU Zhenyu, CHI Yaqing, HUI Ning, FAN Hui, SHEN Dongjun, HE Anlin. Effect of Temperature on Single Event Upset of TFT SRAM and Its Space Error Rate Prediction[J]. Atomic Energy Science and Technology, 2018, 52(4): 750-755. DOI: 10.7538/yzk.2017.youxian.0420 |
| [4] | LIU Yan, CHEN Wei, YANG Shan-chao, QI Chao, WANG Gui-zhen, LIN Dong-sheng, GUO Xiao-qiang, JIN Jun-shan. Experimental Research of Transient Ionizing Upset Effect on Neutron Irradiated CMOS SRAM[J]. Atomic Energy Science and Technology, 2014, 48(增刊1): 723-726. DOI: 10.7538/yzk.2014.48.S0.0723 |
| [5] | HE An-lin, GUO Gang, CHEN Li, SHEN Dong-jun, REN Yi, LIU Jian-cheng, ZHANG Zhi-chao, CAI Li, SHI Shu-ting, WANG Hui, FAN Hui, GAO Li-juan, KONG Fu-quan. Single Event Upset Test of Low Energy Proton on 65 nm SRAM[J]. Atomic Energy Science and Technology, 2014, 48(12): 2364-2369. DOI: 10.7538/yzk.2014.48.12.2364 |
| [6] | LI Ming, YU Xue-feng, XU Fa-yue, LI Mao-shun, GAO Bo, CUI Jiang-wei, ZHOU Dong, XI Shan-bin, WANG Fei. Research on Total Dose Irradiation and Annealing Effect of Static Random Access Memory[J]. Atomic Energy Science and Technology, 2012, 46(4): 507-512. DOI: 10.7538/yzk.2012.46.04.0507 |
| [7] | WANG Zhong-ming, YAO Zhi-bin, GUO Hong-xia, Lv Min. Static and Dynamic Tests of Single-Event Effect in SRAM-Based FPGA[J]. Atomic Energy Science and Technology, 2011, 45(12): 1506-1510. DOI: 10.7538/yzk.2011.45.12.1506 |
| [8] | GUO Hong-xia, LUO Yin-hong, YAO Zhi-bin, ZHANG Feng-qi, ZHANG Ke-ying, HE Bao-ping, WANG Yuan-ming. Experimental Research of SEU and SEL in High Density SRAMs With Sub-micron Feature Sizes[J]. Atomic Energy Science and Technology, 2010, 44(12): 1498-1504. DOI: 10.7538/yzk.2010.44.12.1498 |
| [9] | WANG Gui-zhen, GUO Xiao-qiang, LI Rui-bin, BAI Xiao-yan, YANG Shan-chao, LIN Dong-sheng, GONG Jian-cheng. Damage Pattern of Transient γ-Radiation in 64K CMOS SRAM[J]. Atomic Energy Science and Technology, 2010, 44(1): 121-123. DOI: 10.7538/yzk.2010.44.01.0121 |
| [10] | GAO Bo, YU Xue-feng, REN Di-yuan, WANG Yi-yuan, LI Peng-wei, YU Yue. Total Ionizing Dose Effect for Altera SRAM-Based Field Programmable Gate Array[J]. Atomic Energy Science and Technology, 2009, 43(12): 1128-1132. DOI: 10.7538/yzk.2009.43.12.1128 |
Supported by: Beijing Renhe Information Technology Co., Ltd. 
DownLoad: